pvlib.singlediode.bishop88¶
-
pvlib.singlediode.
bishop88
(diode_voltage, photocurrent, saturation_current, resistance_series, resistance_shunt, nNsVth, d2mutau=0, NsVbi=inf, gradients=False)[source]¶ Explicit calculation of points on the IV curve described by the single diode equation 1.
Warning
Do not use
d2mutau
with CEC coefficients.Usage of
d2mutau
with PVSyst coefficients is required for cadmium- telluride (CdTe) and amorphous-silicon (a:Si) PV modules only.
- Parameters
diode_voltage (numeric) – diode voltages [V]
photocurrent (numeric) – photo-generated current [A]
saturation_current (numeric) – diode reverse saturation current [A]
resistance_series (numeric) – series resistance [ohms]
resistance_shunt (numeric) – shunt resistance [ohms]
nNsVth (numeric) – product of thermal voltage
Vth
[V], diode ideality factorn
, and number of series cellsNs
d2mutau (numeric) – PVSyst thin-film recombination parameter that is the ratio of thickness of the intrinsic layer squared \(d^2\) and the diffusion length of charge carriers \(\mu \tau\), in volts [V], defaults to 0[V]
NsVbi (numeric) – PVSyst thin-film recombination parameter that is the product of the PV module number of series cells
Ns
and the builtin voltageVbi
of the intrinsic layer, in volts [V], defaults tonp.inf
gradients (bool) – False returns only I, V, and P. True also returns gradients
- Returns
tuple – currents [A], voltages [V], power [W], and optionally \(\frac{dI}{dV_d}\), \(\frac{dV}{dV_d}\), \(\frac{dI}{dV}\), \(\frac{dP}{dV}\), and \(\frac{d^2 P}{dV dV_d}\)
Notes
The PVSyst thin-film recombination losses parameters
d2mutau
andNsVbi
are only applied to cadmium-telluride (CdTe) and amorphous- silicon (a:Si) PV modules, 2, 3. The builtin voltage \(V_{bi}\) should account for all junctions. For example: tandem and triple junction cells would have builtin voltages of 1.8[V] and 2.7[V] respectively, based on the default of 0.9[V] for a single junction. The parameterNsVbi
should only account for the number of series cells in a single parallel sub-string if the module has cells in parallel greater than 1.References
- 1
“Computer simulation of the effects of electrical mismatches in photovoltaic cell interconnection circuits” JW Bishop, Solar Cell (1988) DOI: 10.1016/0379-6787(88)90059-2
- 2
“Improved equivalent circuit and Analytical Model for Amorphous Silicon Solar Cells and Modules.” J. Mertens, et al., IEEE Transactions on Electron Devices, Vol 45, No 2, Feb 1998. DOI: 10.1109/16.658676
- 3
“Performance assessment of a simulation model for PV modules of any available technology”, André Mermoud and Thibault Lejeune, 25th EUPVSEC, 2010 DOI: 10.4229/25thEUPVSEC2010-4BV.1.114