pvlib.singlediode.bishop88_v_from_i¶
-
pvlib.singlediode.
bishop88_v_from_i
(current, photocurrent, saturation_current, resistance_series, resistance_shunt, nNsVth, d2mutau=0, NsVbi=inf, method='newton')[source]¶ Find voltage given any current.
Parameters: - current (numeric) – current (I) in amperes [A]
- photocurrent (numeric) – photogenerated current (Iph or IL) in amperes [A]
- saturation_current (numeric) – diode dark or saturation current (Io or Isat) in amperes [A]
- resistance_series (numeric) – series resistance (Rs) in ohms
- resistance_shunt (numeric) – shunt resistance (Rsh) in ohms
- nNsVth (numeric) – product of diode ideality factor (n), number of series cells (Ns), and thermal voltage (Vth = k_b * T / q_e) in volts [V]
- d2mutau (numeric, default 0) – PVsyst parameter for cadmium-telluride (CdTe) and amorphous-silicon (a-Si) modules that accounts for recombination current in the intrinsic layer. The value is the ratio of intrinsic layer thickness squared \(d^2\) to the diffusion length of charge carriers \(\mu \tau\). [V]
- NsVbi (numeric, default np.inf) – PVsyst parameter for cadmium-telluride (CdTe) and amorphous-silicon
(a-Si) modules that is the product of the PV module number of series
cells
Ns
and the builtin voltageVbi
of the intrinsic layer. [V]. - method (str) – one of two optional search methods: either
'brentq'
, a reliable and bounded method or'newton'
which is the default.
Returns: voltage (numeric) – voltage (V) at the specified current (I) in volts [V]