pvlib.singlediode.bishop88_i_from_v#

pvlib.singlediode.bishop88_i_from_v(voltage, photocurrent, saturation_current, resistance_series, resistance_shunt, nNsVth, d2mutau=0, NsVbi=inf, breakdown_factor=0.0, breakdown_voltage=- 5.5, breakdown_exp=3.28, method='newton')[source]#

Find current given any voltage.

Parameters
• voltage (numeric) – voltage (V) in volts [V]

• photocurrent (numeric) – photogenerated current (Iph or IL) [A]

• saturation_current (numeric) – diode dark or saturation current (Io or Isat) [A]

• resistance_series (numeric) – series resistance (Rs) in [Ohm]

• resistance_shunt (numeric) – shunt resistance (Rsh) [Ohm]

• nNsVth (numeric) – product of diode ideality factor (n), number of series cells (Ns), and thermal voltage (Vth = k_b * T / q_e) in volts [V]

• d2mutau (numeric, default 0) – PVsyst parameter for cadmium-telluride (CdTe) and amorphous-silicon (a-Si) modules that accounts for recombination current in the intrinsic layer. The value is the ratio of intrinsic layer thickness squared $$d^2$$ to the diffusion length of charge carriers $$\mu \tau$$. [V]

• NsVbi (numeric, default np.inf) – PVsyst parameter for cadmium-telluride (CdTe) and amorphous-silicon (a-Si) modules that is the product of the PV module number of series cells Ns and the builtin voltage Vbi of the intrinsic layer. [V].

• breakdown_factor (numeric, default 0) – fraction of ohmic current involved in avalanche breakdown $$a$$. Default of 0 excludes the reverse bias term from the model. [unitless]

• breakdown_voltage (numeric, default -5.5) – reverse breakdown voltage of the photovoltaic junction $$V_{br}$$ [V]

• breakdown_exp (numeric, default 3.28) – avalanche breakdown exponent $$m$$ [unitless]

• method (str, default 'newton') – Either 'newton' or 'brentq'. ‘’method’’ must be 'newton' if breakdown_factor is not 0.

Returns

current (numeric) – current (I) at the specified voltage (V). [A]