pvlib.singlediode.bishop88_v_from_i#
- pvlib.singlediode.bishop88_v_from_i(current, photocurrent, saturation_current, resistance_series, resistance_shunt, nNsVth, d2mutau=0, NsVbi=inf, breakdown_factor=0.0, breakdown_voltage=- 5.5, breakdown_exp=3.28, method='newton')[source]#
Find voltage given any current.
- Parameters
current (numeric) – current (I) in amperes [A]
photocurrent (numeric) – photogenerated current (Iph or IL) [A]
saturation_current (numeric) – diode dark or saturation current (Io or Isat) [A]
resistance_series (numeric) – series resistance (Rs) in [Ohm]
resistance_shunt (numeric) – shunt resistance (Rsh) [Ohm]
nNsVth (numeric) – product of diode ideality factor (n), number of series cells (Ns), and thermal voltage (Vth = k_b * T / q_e) in volts [V]
d2mutau (numeric, default 0) – PVsyst parameter for cadmium-telluride (CdTe) and amorphous-silicon (a-Si) modules that accounts for recombination current in the intrinsic layer. The value is the ratio of intrinsic layer thickness squared \(d^2\) to the diffusion length of charge carriers \(\mu \tau\). [V]
NsVbi (numeric, default np.inf) – PVsyst parameter for cadmium-telluride (CdTe) and amorphous-silicon (a-Si) modules that is the product of the PV module number of series cells
Ns
and the builtin voltageVbi
of the intrinsic layer. [V].breakdown_factor (numeric, default 0) – fraction of ohmic current involved in avalanche breakdown \(a\). Default of 0 excludes the reverse bias term from the model. [unitless]
breakdown_voltage (numeric, default -5.5) – reverse breakdown voltage of the photovoltaic junction \(V_{br}\) [V]
breakdown_exp (numeric, default 3.28) – avalanche breakdown exponent \(m\) [unitless]
method (str, default 'newton') – Either
'newton'
or'brentq'
. ‘’method’’ must be'newton'
ifbreakdown_factor
is not 0.
- Returns
voltage (numeric) – voltage (V) at the specified current (I) in volts [V]
Examples using pvlib.singlediode.bishop88_v_from_i
#

Calculating power loss from partial module shading